Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension

Document Type : Articles

Author

Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran

Abstract

Abstract:
For the first time, in this research, we introduce a
junctionless tunneling FET (J-TFET) on a uniform p+
starting junctionless FET to realize appreciable immunity
against inherent high ambipolar current (Iamb). So, we
utilize two isolated gates with appropriate workfunctions
over the channel and drain regions to create P+IP+N+
charge distribution. This structure utilizes a space
between the gate-drain electrodes (SGD), to provide a
P+IP+N+ structure thanks to the effective electrons
depletion on the drain side. Increasing the SGD, further
effectively pulls up the bands near the interface between
the channel-drain regions, widens the tunneling width for
tunneling to occur, and thus in turn reduces the Iamb from
5.37×10-7 A/µm to 1.14×10-14 A/µm. Thus, we point out
that the proposed J-TFET can obtain on-current that
satisfies the expectation of logic applications with high
performance and Ioff that meets the specifications of low
power characteristics, a phenomenon that is rarely
accessible with conventional TFETs.

Keywords

References

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Journal of Optoelectronical Nanostructures
Volume 8, Issue 1 - Serial Number 29
February 2023
Pages 13-31

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