Energy band correction due to one dimension tension in phosphorene

Document Type : Articles

Authors

Department of Physics, Isfahan University of Technology. Isfahan, Iran

Abstract

Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing / from 3 to 2, and finally the gap disappears.

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References

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Journal of Optoelectronical Nanostructures
Volume 2, Issue 1 - Serial Number 4
January 2017
Pages 59-68

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